Capacitance–Voltage Spectroscopy of Trapping States in GaN/AlGaN Heterostructure Field-Effect Transistors
نویسندگان
چکیده
Capacitance–Voltage Spectroscopy of Trapping States in GaN/AlGaN Heterostructure Field-Effect Transistors W. L. Liu1, Y. L. Chen2, A. A. Balandin1 ∗, and K. L. Wang2 1Nano-Device Laboratory, Department of Electrical Engineering, University of California – Riverside, Riverside, CA 92521, USA 2Device Research Laboratory, Electrical Engineering Department, University of California – Los Angeles, Los Angeles, CA 90095, USA
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